Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 4, Issue 3, Pages 124-128Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2016.2539919
Keywords
Bilayer graphene (BLG); tunnel field-effect transistor (TFET); electrostatically doping; non-equilibrium Green's function (NEGF)
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Funding
- Center for Low Energy Systems Technology, one of six centers of STARnet
- Semiconductor Research Corporation Program through Microelectronics Advanced Research Corporation
- Defense Advanced Research Projects Agency
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1206200] Funding Source: National Science Foundation
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A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by vertical electric fields in the source, channel, and drain regions without any chemical doping. The performance of the transistor is evaluated by self-consistent quantum transport simulations. This device has several advantages: 1) ultra-low power (V-DD=0.1V); 2) high performance (I-ON/I-OFF>10(4)); 3) steep subthreshold swing (SS<10mv/dec); and 4) electrically configurable between N-TFET and P-TFET post fabrication. The operation principle of the BED-TFET and its performance sensitivity to the device design parameters are presented.
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