Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films

A large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. The recently proposed magnetic Weyl semimetal EuCd2Sb2 provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-point-related band structure near the Fermi energy. Here, we report the fabrication of EuCd2Sb2 single-crystalline films and control of their anomalous Hall effect by a film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating a clear energy dependence of the intrinsic AHE.

Automated summary

The EuCd2Sb2 single-crystalline films provide a platform for controlling the intrinsic anomalous Hall effect (AHE), which shows clear energy dependence as demonstrated by experimental results and first-principles calculations.