Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 4, Issue 5, Pages 2238-2245Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c00022
Keywords
tunnel electroresistance; ferroelectric tunnel junction; hysteresis; quantum point contact model; monodomain (multidomain) ferroelectric barrier; linearized Thomas-Fermi screening; FeRAM
Funding
- Center for the Semiconductor Technology Research from The Featured Areas Research Center Program within Ministry of Education (MOE) of Taiwan
- Ministry of Science and Technology, Taiwan [MOST 111-2634-F-A49-008, MOST 110-2112-M-A49-016]
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This study simulated the current density in metal-ferroelectric-metal and metal-dielectric-ferroelectric-dielectric-metal systems based on quantum tunneling. The effects of hysteresis and interface screening on the current density were investigated.
Quantum tunneling is the core phenomenological problem in the study of ferroelectric tunnel junctions. Recent advances in ultrathin film ferroelectric devices have yielded the possibility of achieving stable and switchable ferroelectric polarization P even in nanometer-thick Hf0.5Zr0.5O2 layers. In this study, the transport model of the point contact is adapted for the current density (J-V) simulation in metal-ferroelectric-metal [M1/FE/M2] and metal-dielectric-ferroelectric-dielectric-metal [M1/DE/FE/DE/M2] systems, including contributions from hysteresis. Important interfacial screening regions in metals are calculated by a simplified Thomas-Fermi model utilizing a linear approach and keeping an exact analytical solution for the electron transmission. Both systems were compared with each other and with related experimental data. The derived J-V curves are characterized by multiand monodomain ferroelectric behaviors.
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