Journal
OPEN PHYSICS
Volume 20, Issue 1, Pages 458-463Publisher
DE GRUYTER POLAND SP Z O O
DOI: 10.1515/phys-2022-0045
Keywords
Dy3+; Tm3+-codoped GeS2-Ga2S3-PbI2 chalcohalide glass; optical waveguide; ion implantation; thermal stability
Categories
Funding
- National Natural Science Foundation of China [11405041]
- Scientific Research Foundation for Youths by Jiangxi Province Science Foundation [20192BAB217015]
Ask authors/readers for more resources
This article presents the preparation and characterization of the Dy3+/Tm3+-codoped GeS2-Ga2S3-PbI2 chalcohalide glass planar waveguides using proton implantation. The study shows that the waveguides have thermal stability and can be applied in mid-infrared integrated optical devices.
Optical waveguides play a vital role in the manufacture of various optical devices due to their unique performances and high-degree integration. We report on the preparation and characterization of the planar waveguides in the Dy3+/Tm3+-codoped GeS2-Ga2S3-PbI2 chalcohalide glass. The waveguide was formed by the 400 keV H+-ion implantation with a dose of 8 x 10(16) ions/cm(2). Its thermal stability was studied by annealing at 260 degrees C for 1 h. The changes in the nuclear energy loss with the implantation depth were simulated by the stopping and range of ions in matter (SRIM 2013). The dark-mode characteristics of the waveguide were measured by the prism coupling method. The refractive index distribution of the optical waveguide was reconstructed by the reflectivity calculation method. The modal profile of the waveguide structure was calculated by the finite-difference beam propagation method (FD-BPM). The thermally stable proton-implanted Dy3+/Tm3+-codoped GeS2-Ga2S3-PbI2 chalcohalide glass waveguide is expected to be applied in mid-infrared integrated optical devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available