4.4 Article

Solution-Processed Small Molecule Inverted Solar Cells: Impact of Electron Transport Layers

Journal

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 10, Issue -, Pages 435-442

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2022.3165315

Keywords

Buffer layers; dependence light intensity; electron transport layer; impedance spectroscopy; organic solar cells; p-DTS(FBTTh2)(2):PC70BM solar cells; PFN ETL; Solution-processed small molecule; ZnO ETL

Funding

  1. Diputacio de Tarragona [2021CM14]
  2. Spanish Ministry of Science and Innovation (MICINN/FEDER) [RTI2018-094040-B-I00]
  3. Agency for Management of University and Research Grants (AGAUR) [2017-SGR-1527]
  4. ICREA under the ICREA Academia Award
  5. SEP-CINVESTAV in Mexico [32]
  6. Catedras CONACYT para Jovenes Investigadores, through Project Laboratorio Nacional SEDEAM CONACYT [2, 314841]
  7. Catedras CONACYT para Jovenes Investigadores, through Project FORDECYT [297497]
  8. CONACYT [295606]

Ask authors/readers for more resources

This study analyzed the impact of using PFN as ETL in SM-iOSCs, finding that the PFN layer results in a lower fill factor value. With p-DTS(FBTTh2)(2) and PC70BM as donor and acceptor, the photovoltaic devices exhibited good conversion efficiency. Impedance measurements and various analyses on the active layer were conducted to understand the dynamics of charge transport on device performance.
In this work, the use of poly [(9,9-bis (30- (N,N-dimethylamino) propyl) -2,7-fluorene) -alt-2,7- (9,9-dioctylfluorene) (PFN) as electron transport layer (ETL) in inverted small molecule solar cells (SM-iOSCs) is analyzed. The optical and electrical characteristics obtained are compared with those obtained for similar SM-iOSCs where the ETL was zinc oxide. The p-DTS(FBTTh2)(2) and PC70BM materials are used as donor and acceptor in the bulk heterojunction active layer, respectively for all devices. The photovoltaic devices exhibited a power conversion efficiency of 6.75% under 1 sun illumination. Impedance measurements were used to understand the causes that dominate the performance of the devices. We found that the loss resistance is governed by the PFN layer, which results in a lower fill factor value. Studies of atomic force microscopy, external quantum efficiency, and absorption UV-vis on the active layer have been performed to understand the effects of the charge transport dynamics on the performance of the devices.

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