Journal
COMMUNICATIONS MATERIALS
Volume 3, Issue 1, Pages -Publisher
SPRINGERNATURE
DOI: 10.1038/s43246-022-00261-3
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Funding
- National Natural Science Foundation of China [U20A20209]
- Zhejiang Provincial Natural Science Foundation for Distinguished Young Scholar [LR17F040007]
- Ningbo Natural Science Foundation of China [61574147]
- Instrument Developing Project of the Chinese Academy of Sciences [YJKYYQ20180021]
- Research Foundation of Strategic Priority Research Program of Chinese Academy of Sciences [XDA18030100]
- UNSW SHARP Project [RG163043]
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The researchers propose a silicon-based one-transistor design that simplifies traditional multi-transistor logic gates into one-transistor gates, reducing the circuit footprint by at least 40%. This design combines the functionalities of logic gates, memory, and artificial synapses and is implemented using standard silicon-on-insulator process technology.
Logic gates are fundamental components of integrated circuits, and integration strategies involving multiple logic gates and advanced materials have been developed to meet the development requirements of high-density integrated circuits. However, these strategies are still far from being widely applicable owing to their incompatibility with the modern silicon-based foundry lines. Here, we propose a silicon-foundry-line-based multi-gate one-transistor design to simplify the conventional multi-transistor logic gates into one-transistor gates, thus reducing the circuit footprint by at least 40%. More importantly, the proposed configuration could simultaneously provide the multi-functionalities of logic gates, memory, and artificial synapses. In particular, our design could mimic the artificial synapses in three dimensions while simultaneously being implemented by standard silicon-on-insulator process technology. The foundry-line-compatible one-transistor design has great potential for immediate and widespread applications in next-generation multifunctional electronics. Developing scalable strategies of miniaturization and integration is key for achieving high-density integrated circuit devices. Here, the authors propose a silicon-based one-transistor device with a 40% reduction in circuit footprint, which combines the functionalities of logic gates, memory, and artificial synapses for mass production.
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