4.6 Article

Bidirectionally Modulated Synaptic Plasticity with Optically Tunable Ionic Transistors

Journal

ACS APPLIED ELECTRONIC MATERIALS
Volume 4, Issue 6, Pages 2629-2635

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c00289

Keywords

neuromorphic computing; optically driven synaptic device; metal chalcogenide; pattern recognition; ionic electrolyte transistor

Funding

  1. National Research Foundation of Korea (NRF) - Korea government (MSIP) [NRF-2019R1A2C2002447]
  2. Competency Development Program for Industry Specialists of the Korean Ministry of Trade, Industry and Energy (MOTIE) [P0002397]
  3. Chung-Ang University

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The recent development of hardware implementation of neuromorphic devices in the optical domain has shown promising results in energy-efficient computing systems. By utilizing ionic electrolyte transistors, a bidirectional synaptic device has been successfully demonstrated, enabling synaptic potentiation or depression with high pattern recognition accuracy of up to 90.1% in simulations.
Recently, hardware implementation of neuromorphic device in the optical domain is considered as one of the most promising routes to realize energy-efficient neuromorphic computing systems. Especially, a complete plasticity modulation by all-photonic stimulation has been one of the most important challenges for implementation of an optoelectronic neuromorphic device. Here, we demonstrate a fully optically driven bidirectional synaptic device using ionic electrolyte transistors. The photovoltaic divider enables wavelength-selective light-to-voltage conversion and subsequently induces ionic migration in the electrolyte, resulting in the synaptic potentiation or depression. Based on the synaptic characteristics, pattern recognition with an accuracy up to 90.1% is obtained in the Modified National Institute of Standards and Technology simulation.

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