Journal
INFOMAT
Volume 4, Issue 8, Pages -Publisher
WILEY
DOI: 10.1002/inf2.12347
Keywords
CH3NH3PbBr3; graphene; perovskite; photodetectors; van der Waals integration
Categories
Funding
- Fok Ying-Tong Education Foundation [171051]
- National Key RD Program [2020YFA0709800]
- National Natural Science Foundation of China [U20A20168, 51861145202, 61874065, 62022047]
- Beijing Natural Science Foundation [M22020]
- Beijing National Research Center for Information Science and Technology Youth Innovation Fund [BNR2021RC01007]
- State Key Laboratory of New Ceramic and Fine Processing Tsinghua University [KF202109]
- Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- TsinghuaFoshan Innovation Special Fund (TFISF) [2021THFS0217]
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In this study, a monolithic integrated graphene/perovskite heterojunction device was fabricated by directly growing a single-crystal hybrid perovskite on monolayer graphene. The device exhibited self-powering behavior and prominent photoresponse properties.
Mixed-dimensional (2D/3D) van der Waals (vdW) heterostructures made with complementary materials hold a lot of promise in the field of optoelectronic devices. Beyond simple mechanical stacking, directly growing the single-crystal perovskite on 2D materials to construct a high-quality vdW heterojunction can better promote carrier transport. In this work, a monolithic integrated graphene/perovskite heterojunction device is fabricated by directly growing a single-crystal hybrid perovskite on monolayer graphene. Due to the strong interface coupling, the hybrid device achieves self-powering behavior and exhibits prominent photoresponse properties with a fast response speed of up to 2.05 mu s. Moreover, the responsivity and detectivity can be boosted to up to 10.41 A W-1 and 4.65 x 10(12) Jones under the actuation of -3 V bias. This technique not only improves the device performance, but also provides an effective guideline for the development of next-generation directly integrated vdW optoelectronic devices.
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