Journal
MATERIALS RESEARCH EXPRESS
Volume 3, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1591/3/6/065007
Keywords
MoS2; sputter; transition metal dichalcogenide
Categories
Funding
- Ministry of Science and Technology of Taiwan, Republic of China [MOST103-2221-E-009-221-MY3, 102-2119-M-001-005-MY3]
- NCTU-UCB I-RiCE program [MOST104-2911-I-009-301]
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Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).
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