Design and realization of InP-based resonant tunneling diode THz oscillator

An oscillator above1THz is designed and realized using InP-based resonant tunneling diode???RTD???and an on-chip antenna with Si-lens.The RTD model was built and studied with Silvaco software.The influencesof the doping concentration of emitter???the thickness of barrier layer???space layer???and well layer on the DC char???acteristics of the device have been analyzed.The DC measurement of the RTD shows the peak current densityJp=359.2kA/cm2???the valley current densityJv=135.8kA/cm2???and the peak-to-valley current ratio???PVCR???=2.64.According to the measurement???the maximum RF output power and oscillation frequency???fmax???are theoreti???cally calculated???which are1.71mW and1.49THz???respectively.The oscillator with an on-chip bow-tie antennaand RTD is packaged with Si-lens.The measurement shows the output power is2.57 mu W at an operation frequen???cy of above1THz???the DC power consumption is8.33mW.This is the first reported oscillator of frequencyabove1THz in domestic

Automated summary

This study designs and realizes an oscillator above 1THz using an InP-based resonant tunneling diode (RTD) and an on-chip antenna with a Si-lens. The RTD model is built and studied using Silvaco software. The effects of doping concentration, barrier layer thickness, space layer, and well layer on the DC characteristics of the device have been analyzed. The experimental results show that the oscillator achieves high RF output power and oscillation frequency at an operation frequency above 1THz.