Application of 2D Materials in Hardware Security for Internet-of-Things: Progress and Perspective

Review Chemistry, Multidisciplinary

The Road for 2D Semiconductors in the Silicon Age

Shuiyuan Wang et al.

Summary: The fusion of 2D materials with silicon ICs shows potential to drive advanced performance in ICs, overcome challenges in silicon ICs, and create technologies beyond the von Neumann architecture.

ADVANCED MATERIALS (2022)

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Review Chemistry, Multidisciplinary

Growth of 2D Materials at the Wafer Scale

Xiangming Xu et al.

Summary: This paper reviews the growth methods of vdW layered 2D materials, focusing on three strategies for achieving large-area continuous film growth at the wafer scale. It also discusses the progress in their applications in integrated devices and advanced epitaxy. The future directions in the growth and scaling of vdW layered 2D materials are also discussed.

ADVANCED MATERIALS (2022)

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Article Chemistry, Multidisciplinary

2D Materials-Based Static Random-Access Memory

Chang-Ju Liu et al.

Summary: Research indicates that monolayer 2DM FET with superior electrostatics is beneficial in reducing read-write conflicts in SRAM cells at scaled technology nodes, while monolayer 2DM SRAM shows lower cell read access time and write time compared to bilayer and trilayer 2DM SRAM cells at fixed leakage power.

ADVANCED MATERIALS (2022)

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Article Nanoscience & Nanotechnology

Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

Jinhuan Wang et al.

Summary: Epitaxial growth of two-inch single-crystal WS2 monolayer films on vicinal a-plane sapphire surfaces has been achieved, driven by a dual-coupling-guided mechanism resulting in unidirectional alignment of WS2 islands. The high quality of WS2 monolayers is evidenced by a photoluminescent circular helicity of about 55%, comparable to exfoliated WS2 flakes. The findings offer the opportunity to boost the production of wafer-scale single crystals of various two-dimensional materials on insulators for applications in integrated devices.

NATURE NANOTECHNOLOGY (2022)

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Article Chemistry, Multidisciplinary

Wafer-Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy-Efficient Neural Network Hardware

Sifan Li et al.

Summary: The study demonstrates a memristor crossbar array using large-scale hafnium diselenide thin films and a metal-assisted transfer technique, showing low switching voltage and energy, high recognition accuracy, and power efficiency. Hardware multiply-and-accumulate operation and programmable kernel-based image processing were successfully showcased.

ADVANCED MATERIALS (2022)

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Article Chemistry, Multidisciplinary

Bi2O2Se-Based True Random Number Generator for Security Applications

Bo Liu et al.

Summary: The fast development of the Internet of Things (IoT) brings security challenges, and a true random number generator (TRNG) based on stochastic physical phenomena, such as the Bi2O2Se-based TRNG, shows potential in ensuring data security. Compared to traditional memristors, the Bi2O2Se layer has unique properties for more reliable analogue/digital random number generation.

ACS NANO (2022)

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Review Chemistry, Multidisciplinary

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

Yang Shen et al.

Summary: This study reviews the current structures, contact engineering, and doping methods for 2D TMDC materials, as well as the scaling-down process and performance optimization. It also analyzes the obstacles to developing high-density and low-power integrated circuits using MoS2 and provides a brief analysis of the prospects for using MoS2 in large-scale ICs from the perspectives of material, system performance, and application.

ADVANCED MATERIALS (2022)

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Article Chemistry, Multidisciplinary

In-Memory Computing using Memristor Arrays with Ultrathin 2D PdSeOx/PdSe2 Heterostructure

Yesheng Li et al.

Summary: This paper presents a low-voltage memristor array based on an ultrathin PdSeOx/PdSe2 heterostructure switching medium, which solves the problem of random ion transport in traditional memristors, achieving remarkable uniform switching with low variability. Convolutional image processing with high recognition accuracy was also achieved by using various crossbar kernels.

ADVANCED MATERIALS (2022)

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Article Multidisciplinary Sciences

Vertical MoS2 transistors with sub-1-nm gate lengths

Fan Wu et al.

Summary: In this study, sidewall MoS2 transistors with sub-1 nm physical gate length were successfully fabricated by using the edge of a graphene layer as the gate electrode. These devices exhibit excellent performance characteristics and could potentially advance the scaling down of next-generation electronic devices.

NATURE (2022)

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Article Multidisciplinary Sciences

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

Lei Liu et al.

Summary: This study reports the successful nucleation of bilayer molybdenum disulfide (MoS2) on c-plane sapphire, achieving uniformity in the nucleation process. The design of atomic terrace height on c-plane sapphire allows for an edge-nucleation mechanism and the coalescence of MoS2 domains into continuous, centimeter-scale films. Field-effect transistor devices based on bilayer MoS2 channels show improved mobility and reduced variation compared to monolayer films.

NATURE (2022)

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Article Nanoscience & Nanotechnology

Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor

Sumin Hwangbo et al.

Summary: This paper presents a novel fabrication method for the integration of transition metal dichalcogenides with compound semiconductors, which is compatible with a batch microfabrication process. The authors demonstrate the synthesis of a thin film of molybdenum disulfide on a gallium-nitride-based epitaxial wafer, which is then used to form a thin film transistor array. This transistor array is subsequently integrated with micro-light-emitting-diode devices to create an active matrix micro-LED display. The authors also show a simple approach for obtaining red and green colors through the printing of quantum dots on a blue micro-LED, enabling the scalable fabrication of full-color micro-LED displays.

NATURE NANOTECHNOLOGY (2022)

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Editorial Material Multidisciplinary Sciences

2D materials for future heterogeneous electronics

Max C. Lemme et al.

Summary: This article investigates the reasons for the slow transition of graphene and 2D materials from laboratories to commercial production and summarizes the main challenges and opportunities that have hindered their commercialization.

NATURE COMMUNICATIONS (2022)

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Article Chemistry, Physical

Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions

Bangjie Shao et al.

Summary: The research explores the use of MoS(2) material to grow and fabricate FETs for the application of physically unclonable functions (PUF). Through electrical characterizations of 448 devices and generating PUF keys by splitting drain current levels, the study demonstrates the good randomness and uniqueness of MoS(2) material, offering the possibility of highly secure PUF devices.

NANO RESEARCH (2021)

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Article Chemistry, Multidisciplinary

A Machine Learning Attack Resilient True Random Number Generator Based on Stochastic Programming of Atomically Thin Transistors

Akshay Wali et al.

Summary: This article introduces a ML attack resilient, low-power, and low-cost TRNG based on floating gate field effect transistors and atomically thin channel materials, which meets high entropy, uniformity, uniqueness, and unclonability requirements and passes NIST randomness tests.

ACS NANO (2021)

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Article Chemistry, Multidisciplinary

Secure Electronics Enabled by Atomically Thin and Photosensitive Two-Dimensional Memtransistors

Aaryan Oberoi et al.

Summary: The rapid proliferation of security compromised hardware in today's integrated circuit supply chain poses a global threat, providing opportunities for innovation. Researchers have proposed a new bottom-up security solution, utilizing the properties of atomically thin two-dimensional memtransistors to implement various security primitives to address issues such as counterfeit authentication and reverse engineering of ICs.

ACS NANO (2021)

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Article Chemistry, Multidisciplinary

Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing

Xuewei Feng et al.

Summary: A novel structure of multiterminal memtransistor crossbar array with increased parallelism in programming via independent gate control is demonstrated, achieving low power consumption in dense cell sizes. The architecture is capable of performing multiply-and-accumulate operation with high recognition accuracy. Such computing paradigm is considered revolutionary for enabling data-centric applications in artificial intelligence and Internet-of-things.

ACS NANO (2021)

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Article Chemistry, Multidisciplinary

Gate-Tunable Polar Optical Phonon to Piezoelectric Scattering in Few-Layer Bi2O2Se for High-Performance Thermoelectrics

Fang Yang et al.

Summary: The study found that 2D Bi2O2Se exhibits excellent thermoelectric performance, with the potential for maximizing thermoelectric performance by controlling the scattering mechanism and carrier mobility.

ADVANCED MATERIALS (2021)

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Article Engineering, Electrical & Electronic

Two-dimensional transistors with reconfigurable polarities for secure circuits

Peng Wu et al.

Summary: This research demonstrates the potential of transistors using two-dimensional black phosphorus as the active material for hardware security applications, showing dynamic polarity switching capability and excellent performance under low voltage operation.

NATURE ELECTRONICS (2021)

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Article Chemistry, Multidisciplinary

Satisfiability Attack-Resistant Camouflaged Two-Dimensional Heterostructure Devices

Akshay Wali et al.

Summary: Reverse engineering is a major security threat in the semiconductor industry, with camouflaging techniques used to thwart such threats. Existing camouflaging methods involve transformable interconnects and covert gates. Emerging solutions like polymorphic gates and FETs show promise but come with area overhead.

ACS NANO (2021)

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Article Multidisciplinary Sciences

Promises and prospects of two-dimensional transistors

Yuan Liu et al.

Summary: The article reviews the promise and current status of 2D transistors, emphasizing the potential misestimation or misinterpretation of widely used device parameters. It suggests using more reliable methods to assess the potential of diverse 2D semiconductors and highlights key technical challenges in optimizing the performance of 2D transistors.

NATURE (2021)

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Article Engineering, Electrical & Electronic

A Highly Reliable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source

Bohan Lin et al.

Summary: PUF technology is widely used in hardware security, and the RRAM-based PUF chip exhibits superior performance and reliability. Experimental results show excellent performance of PUF in the differential mode.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2021)

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Article Engineering, Electrical & Electronic

The development of integrated circuits based on two-dimensional materials

Kaichen Zhu et al.

Summary: The paper discusses the development of integrated circuits based on layered two-dimensional materials, evaluating the most advanced circuits fabricated so far and exploring key challenges that need to be addressed. It also proposes a roadmap for future development and considers potential commercial applications and challenges for highly scaled circuits.

NATURE ELECTRONICS (2021)

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Review Engineering, Electrical & Electronic

Transistors based on two-dimensional materials for future integrated circuits

Saptarshi Das et al.

Summary: This paper examines the development of field-effect transistors based on two-dimensional materials for VLSI technology, highlighting the challenges that need to be addressed such as reducing contact resistance, stable doping schemes, mobility engineering, and high-k dielectric integration. The review emphasizes the importance of large-area growth of uniform 2D layers in ensuring low defect density and clean interfaces. Furthermore, potential applications of 2D transistors in various futuristic technologies are discussed.

NATURE ELECTRONICS (2021)

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Article Multidisciplinary Sciences

Ultralow contact resistance between semimetal and monolayer semiconductors

Pin-Chun Shen et al.

Summary: The article discusses achieving ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides, suppressing metal-induced gap states and significantly reducing contact resistance. Experimental results demonstrate zero Schottky barrier height and high on-state current density on multilayer MoS2.

NATURE (2021)

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Article Multidisciplinary Sciences

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

Xiaolong Xu et al.

Summary: The study presents a method for synthesizing wafer-scale single-crystalline 2H MoTe2 semiconductors on an amorphous insulating substrate, with excellent uniformity and 100% device yield. The 2D single-crystalline film can serve as a template for further rapid epitaxy in a vertical manner.

SCIENCE (2021)

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Article Multidisciplinary Sciences

Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks

Xumeng Zhang et al.

Summary: Spiking neural networks, inspired by the human brain, are a promising solution for efficient data processing. Memristor-based neurons and synapses are becoming intriguing candidates for hardware implementation, but their limited functionalities present challenges for in-situ learning. A hybrid spiking neuron combining memristors with digital circuits shows potential for enhancing neuron functions and supporting in-situ learning in neuromorphic computing systems.

SCIENCE BULLETIN (2021)

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Article Engineering, Electrical & Electronic

Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors

Liting Liu et al.

Summary: Vertical transistors using molybdenum disulfide with channel lengths down to one atomic layer can be created with a high-quality metal-semiconductor interface through a mechanical van der Waals transfer process.

NATURE ELECTRONICS (2021)

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Article Engineering, Electrical & Electronic

Graphene-based physically unclonable functions that are reconfigurable and resilient to machine learning attacks

Akhil Dodda et al.

Summary: Graphene has properties suitable for Internet of Things devices, but deployment may require developing graphene-based hardware security primitives. A physically unclonable function (PUF) using disorder in graphene field-effect transistors' carrier transport can resist machine learning attacks and be reconfigurable without physical intervention. The PUF operates with ultralow power, is scalable, stable over time, reliable against temperature and voltage variations, and can withstand advanced computational attacks.

NATURE ELECTRONICS (2021)

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Article Engineering, Electrical & Electronic

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

Yesheng Li et al.

Summary: Memristors based on pentagonal palladium diselenide demonstrate anomalous resistive switching behavior with two interchangeable reset modes, showing good switching performance and stability.

NATURE ELECTRONICS (2021)

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Article Chemistry, Multidisciplinary

Out-of-Plane Resistance Switching of 2D Bi2O2Se at the Nanoscale

Wenjun Chen et al.

Summary: This study reveals the unique out-of-plane transport behavior of 2D Bi2O2Se, laying the foundation for fabricating vertical devices based on this emerging 2D material. Furthermore, it demonstrates the formation of conductive hillocks in Bi2O2Se under a vertical electric field, leading to out-of-plane resistance switching and potential applications as a selector in vertical devices.

ADVANCED FUNCTIONAL MATERIALS (2021)

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Review Chemistry, Multidisciplinary

Emerging 2D Memory Devices for In-Memory Computing

Lei Yin et al.

Summary: The paper reviews the recent progress of 2D memory devices for in-memory computing, describing their operation mechanisms, memory characteristics, and weighing their pros and cons. It also presents their versatile applications in in-memory computing technology, and discusses the current challenges and potential strategies for future 2D in-memory computing systems.

ADVANCED MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Advanced Data Encryption using 2D Materials

Chao Wen et al.

Summary: This study demonstrates the fabrication of highly stable TRNG circuits with low power consumption, high degree of randomness using multilayer hexagonal boron nitride devices. The application of these devices in generating one-time passwords for internet-of-everything is also showcased, highlighting their superior stability attributed to the few-atoms-wide defects embedded within the layered structure of h-BN.

ADVANCED MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Surface Diffusion and Epitaxial Self-Planarization for Wafer-Scale Single-Grain Metal Chalcogenide Thin Films

Anupam Giri et al.

Summary: By utilizing commercial wafers to synthesize wafer-scale single-grain MC thin films and proposing a new mechanism for thin-film formation, it is possible to achieve the fabrication of single-crystal thin films and realize the production of high-performance electronic devices.

ADVANCED MATERIALS (2021)

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Review Chemistry, Multidisciplinary

Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis

Leining Zhang et al.

Summary: The successful exfoliation of graphene has led to an increased focus on research of two-dimensional materials, which exhibit unique properties and potential applications. To achieve large-scale practical applications, wafer scale single crystalline 2D materials are crucial but face challenges in synthesis. Different routes for synthesizing these materials have been explored, with some successes in WSSC graphene, hBN, and MoS2, while growth of other WSSC 2D materials remains a significant challenge. Opportunities for future research in the synthesis of various wafer scale single crystalline 2D materials have been summarized.

CHEMICAL REVIEWS (2021)

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Review Nanoscience & Nanotechnology

Application of Resistive Random Access Memory in Hardware Security: A Review

Gokulnath Rajendran et al.

Summary: Advancements in trusted system environments now rely on hardware-based security provided by emerging nonvolatile memory devices like RRAM. RRAM offers high-density integration, outstanding performance, and multi-bit storage capability. These characteristics make RRAM suitable for designing security hardware, such as Physical Unclonable Function and hash function.

ADVANCED ELECTRONIC MATERIALS (2021)

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Article Chemistry, Multidisciplinary

2D Bi2O2Se: An Emerging Material Platform for the Next-Generation Electronic Industry

Tianran Li et al.

Summary: 2D Bi2O2Se, a novel semiconductor material, shows ultrahigh carrier mobility, moderate band gap, stability, and excellent mechanical properties, making it a promising candidate for next-generation electronics. Through comprehensive research on its structure, synthesis methods, and chemical/physical properties, high-performance 2D Bi2O2Se-based electronic devices can be fabricated. Additionally, patterning large-area Bi2O2Se thin films and integrating them into circuits will be the future direction of development.

ACCOUNTS OF MATERIALS RESEARCH (2021)

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Review Chemistry, Multidisciplinary

Review and comparison of layer transfer methods for two-dimensional materials for emerging applications

Thomas F. Schranghamer et al.

Summary: 2D materials have immense potential for scientific breakthroughs and technological innovations. Various layer transfer methods have been developed for transferring 2D materials from the growth substrate to the target application substrate, each with different levels of cleanliness, uniformity, and transfer-related damage. Further research and improvements are needed to address the challenges in this area.

CHEMICAL SOCIETY REVIEWS (2021)

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Review Automation & Control Systems

Application of Memristors in Hardware Security: A Current State-of-the-Art Technology

Shiya Lv et al.

Summary: Research on memristors in hardware security applications, particularly in the areas of PUFs, RNGs, and chaotic circuits, has shown promising advancements. By leveraging the randomness of memristors and introducing 3D crossbars, device security can be enhanced, leading to a greater number of challenge-response pairs and providing evidence of key destruction.

ADVANCED INTELLIGENT SYSTEMS (2021)

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Article Chemistry, Multidisciplinary

Threshold switching memristor-based stochastic neurons for probabilistic computing

Kuan Wang et al.

Summary: This study utilizes a novel CuS/GeSe conductive-bridge threshold switching memristor to fabricate electronic stochastic neurons, which enables Bayesian inference and improves accuracy in tumor diagnosis tasks compared to conventional artificial neural networks. Stochastic neurons, as opposed to deterministic ones, allow for better estimation of uncertainty and improve judgement accuracy by 81.2% in spiking neural networks.

MATERIALS HORIZONS (2021)

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Article Materials Science, Multidisciplinary

Ultra-scaled MoS2 transistors and circuits fabricated without nanolithography

Kishan Ashokbhai Patel et al.

2D MATERIALS (2020)

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A Monolayer Leaky Integrate-and-Fire Neuron for 2D Memristive Neuromorphic Networks

Song Hao et al.

ADVANCED ELECTRONIC MATERIALS (2020)

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Progress Report on Property, Preparation, and Application of Bi2O2Se

Yuan Sun et al.

ADVANCED FUNCTIONAL MATERIALS (2020)

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Two-dimensional materials for next-generation computing technologies

Chunsen Liu et al.

NATURE NANOTECHNOLOGY (2020)

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A survey on physical unclonable function (PUF)-based security solutions for Internet of Things

Alireza Shamsoshoara et al.

COMPUTER NETWORKS (2020)

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Insulators for 2D nanoelectronics: the gap to bridge

Yury Yu. Illarionov et al.

NATURE COMMUNICATIONS (2020)

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Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors

Alexander Scholz et al.

NATURE COMMUNICATIONS (2020)

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True Random Number Generator Integration in a Resistive RAM Memory Array Using Input Current Limitation

Hassen Aziza et al.

IEEE TRANSACTIONS ON NANOTECHNOLOGY (2020)

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Physical unclonable functions

Yansong Gao et al.

NATURE ELECTRONICS (2020)

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Van der Waals integration before and beyond two-dimensional materials

Yuan Liu et al.

NATURE (2019)

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Small footprint transistor architecture for photoswitching logic and in situ memory

Chunsen Liu et al.

NATURE NANOTECHNOLOGY (2019)

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Memristors for Hardware Security Applications

Yachuan Pang et al.

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Understanding memristive switching via in situ characterization and device modeling

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Deji Akinwande et al.

NATURE (2019)

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Recommended Methods to Study Resistive Switching Devices

Mario Lanza et al.

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Electric-field induced structural transition in vertical MoTe2- and Mo1-xWxTe2-based resistive memories

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Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

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NATURE NANOTECHNOLOGY (2019)

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Physically Unclonable Function by an All-Printed Carbon Nanotube Network

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ACS APPLIED ELECTRONIC MATERIALS (2019)

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Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

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NANO LETTERS (2018)

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Steep-slope hysteresis-free negative capacitance MoS2 transistors

Mengwei Si et al.

NATURE NANOTECHNOLOGY (2018)

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Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Xiaolong Zhao et al.

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A library of atomically thin metal chalcogenides

Jiadong Zhou et al.

NATURE (2018)

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Probing memristive switching in nanoionic devices

Yuchao Yang et al.

NATURE ELECTRONICS (2018)

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Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

Zhongrui Wang et al.

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Intrinsic Limits to Contact Resistivity in Transition Metal Dichalcogenides

Varun Mishra et al.

IEEE ELECTRON DEVICE LETTERS (2017)

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Solution-Processed Carbon Nanotube True Random Number Generator

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Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures

Kibum Kang et al.

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High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

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A novel true random number generator based on a stochastic diffusive memristor

Hao Jiang et al.

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Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS2

Abdullah Alharbi et al.

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Atomically Thin Femtojoule Memristive Device

Huan Zhao et al.

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Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination

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Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

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Stochastic phase-change neurons

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MoS2 transistors with 1-nanometer gate lengths

Sujay B. Desai et al.

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Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

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Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

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Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

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Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques

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Application of 2D Materials in Hardware Security for Internet-of-Things: Progress and Perspective

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