4.8 Article

Phase control and lateral heterostructures of MoTe2 epitaxially grown on graphene/Ir(111)

Journal

NANOSCALE
Volume 14, Issue 30, Pages 10880-10888

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d2nr03074h

Keywords

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Funding

  1. Spanish Ministry of Science and Innovation [PGC2018-093291-B-I00, PGC2018-097028-A-I00, PGC2018-098613-B-C21, CEX2018-000805-M, SEV-2016-0686]
  2. Comunidad de Madrid [S2018/NMT-4511]
  3. Postdoctoral Junior Leader Fellowship Programme from la Caixa Banking Foundation [LCF/BQ/PI18/11630010]
  4. Ramon y Cajal Fellowship program [RYC2020-029317-I]

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The epitaxial growth of monolayer MoTe2 on graphene on an Ir(111) substrate is investigated, showing that the structural and electronic properties of different polymorphic phases can be controlled and decoupled from the substrate.
Engineering the growth of the different phases of two-dimensional transition metal dichalcogenides (2D-TMDs) is a promising way to exploit their potential since the phase determines their physical and chemical properties. Here, we report on the epitaxial growth of monolayer MoTe2 on graphene on an Ir(111) substrate. Scanning tunneling microscopy and spectroscopy provide insights into the structural and electronic properties of the different polymorphic phases, which remain decoupled from the substrate due to the weak interaction with graphene. In addition, we demonstrate a great control of the relative coverage of the relevant 1T ' and 1H MoTe2 phases by varying the substrate temperature during the growth. In particular, we obtain large areas of the 1T ' phase exclusively or the coexistence of both phases with different ratios.

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