Journal
PHYSICAL REVIEW B
Volume 105, Issue 17, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.105.174440
Keywords
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Funding
- Division of Materials Science and Engineering of the Office of Basic Energy Sciences of the U.S. Department of Energy (DOE)
- U.S DOE by Iowa State University [DE-AC0207CH11358]
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Magnetic, specific heat, and electrical transport measurements of Gd4ScGe4 single crystals reveal a sharp magnetostructural transformation at 63 K. The electrical resistivity shows anomalous behavior due to electron-paramagnon scattering and intermediate lattice states. The low-temperature heat capacity is influenced by a magnetic component and electron-magnon scattering caused by spin waves.
Magnetic, specific heat, and electrical transport measurements of Gd4ScGe4 single crystals reveal sharp, discontinuous, nearly anhysteretic first-order magnetostructural transformation at T-C = 63 K. The electrical resistivity exhibits two distinct regions where it increases with decreasing temperature: between T-C and 120 K, as well as below 3 K; electronic transport remains conventionally metallic at all other measured temperatures, up to 325 K. The dispersion of charge carriers due to electron-paramagnon scattering is the likely reason for the observed anomalous transport above T-C. Additionally, the existence of intermediate lattice states near the transition recognized by the spike in the interslab Ge-Ge distances is expected to reduce the mean free path of the electrons contributing to the unusual behavior of the electrical resistivity between T-C and 120 K. Beyond conventional electronic and lattice terms, the third component of likely magnetic origin contributes to the low-temperature heat capacity; the presence of spin waves may be responsible for the increased electron-magnon scattering below 3 K. Minor magnetocrystalline anisotropy is observed with the b axis as the easy magnetization axis in Gd4ScGe4. A negative deviation from linearity in the temperature dependence of the inverse magnetic susceptibility is detected below 150 K.
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