4.6 Article

Manipulating the metal-to-insulator transition and magnetic properties in manganite thin films via epitaxial strain

Journal

PHYSICAL REVIEW B
Volume 105, Issue 16, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.105.165426

Keywords

-

Funding

  1. National Natural Science Foundation of China [52102177]
  2. National Natural Science Foundation of Jiangsu Province [BK20210313, 21872116, 22075232]
  3. Top-notch Academic Programs Project of Jiangsu Higher Education Institutions (TAPP)
  4. Jiangsu Specially-Appointed Professor Program
  5. European Research Council [758345]
  6. EPSRC [EP/L000202, EP/R029431, EP/T022213, EP/P020194]
  7. NNSA's Laboratory Directed Research and Development Program
  8. U.S. Department of Energy's NNSA [89233218CNA000001]
  9. National Research Foundation (NRF) Singapore [NRF-NRFF11-2019-0002]
  10. U.S. National Science Foundation [ECCS-1902623]
  11. European Union's Horizon 2020 research and innovation programme [823717-ESTEEM3]
  12. European Research Council (ERC) [758345] Funding Source: European Research Council (ERC)

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Research shows that strain engineering can effectively control the electronic structure, magnetic and transport properties of La0.9Ba0.1MnO3 thin films. By adjusting the strain, the orbital occupancy of Mn can be changed, leading to significant modulation of the magnetic and electronic properties.
Strain engineering of epitaxial transition metal oxide heterostructures offers an intriguing opportunity to control electronic structures by modifying the interplay between spin, charge, orbital, and lattice degrees of freedom. Here, we demonstrate that the electronic structure, magnetic and transport properties of La0.9Ba0.1MnO3 thin films can be effectively controlled by epitaxial strain. Spectroscopic studies and first-principles calculations reveal that the orbital occupancy in Mn e(g) orbitals can be switched from the d(3z2-r2) orbital to the d(x2-y2) orbital by varying the strain from compressive to tensile. The change of orbital occupancy associated with Mn 3d-O 2p hybridization leads to dramatic modulation of the magnetic and electronic properties of strained La0.9Ba0.1MnO3 thin films. Under moderate tensile strain, an emergent ferromagnetic insulating state with an enhanced ferromagnetic Curie temperature of 215 K is achieved. These findings not only deepen our understanding of electronic structures, magnetic and transport properties in the La0.9Ba0.1MnO3 system, but also demonstrate the use of epitaxial strain as an effective knob to tune the electronic structures and related physical properties for potential spintronic device applications.

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