4.6 Article

Antiferromagnet-induced perpendicular magnetic anisotropy in ferromagnetic Co/Fe films with strong in-plane magnetic anisotropy

Journal

PHYSICAL REVIEW B
Volume 105, Issue 18, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.105.184415

Keywords

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Funding

  1. Ministry of Science and Technology, Taiwan [MOST 110-2112-M-018007]

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This study reports the effects of triggering perpendicular magnetic anisotropy in a ferromagnetic film with strong in-plane magnetic anisotropy through nearby antiferromagnetic films. The results demonstrate that different antiferromagnetic structures can induce perpendicular magnetic anisotropy in the ferromagnetic film through exchange coupling at room temperature or low temperature.
Ferromagnetic (FM) films with higher magnetic moment density typically exhibit sizable in-plane magnetic anisotropy as a result of strong dipolar interactions, which hinder their application in state-of-the-art perpendicularly based magnetic devices. This study reports the effects of triggering the perpendicular magnetic anisotropy (PMA) of a Co/Fe film with strong in-plane magnetic anisotropy through nearby antiferromagnetic (AFM) fcc Fe50Mn50 and face-centered tetragonal (e-fct) Mn films. Our results demonstrate that fcc Fe50Mn50 films with a three-dimensional quadratic AFM spin structure can trigger robust PMA in a Co/Fe film through collinearlike AFM-FM exchange coupling at room temperature. Furthermore, by incorporating a monolayered Fe50Mn50 film into the Mn-Co interface or by reducing the temperature, PMA can also be triggered in a Co/Fe film by using e-fct Mn films with an in-plane-oriented AFM spin structure at room or low temperature through noncollinear exchange coupling across the AFM-FM interface. Our results clarify the exchange-coupling mechanisms, characteristic behaviors, and critical conditions for increasing control over antiferromagnet-induced PMA in FM films with high magnetic moment density but strong in-plane magnetic anisotropy, which is helpful for the development of next-generation perpendicularly based spintronic devices.

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