Band offset measurement at the MAPbBr3/Al2O3 heterointerface by X-ray photoelectron spectroscopy

Recently, Al2O3 has been demonstrated to be an effective material type for perovskite photoelectric device performance improvement. It is therefore essential to investigate the interfacial electronic characteristics and the energy-level diagrams of perovskite/Al2O3 heterojunctions in depth. In this research, we fabricated an MAPbBr(3) microcrystal/Al2O3 film heterojunction and determined the band offset by performing X-ray photoelectron spectroscopy measurements. The resulting valence band offset of Delta E-v = 0.87 +/- 0.01 eV and the conduction band offset of Delta E-c = 3.03 +/- 0.01 eV indicated occurrence of a type-I band alignment at the MAPbBr(3)/Al2O3 heterointerface. The carrier confinement effect was reflected in the photoluminescence spectra obtained for the heterojunction sample. This work will be valuable for optimization of the energy level alignment of perovskite/metallic oxide heterojunctions during the design of photoelectric devices. (C) 2022 Published by Elsevier B.V.

Automated summary

In this research, the band offset of the MAPbBr(3)/Al2O3 heterojunction was determined through X-ray photoelectron spectroscopy measurements, showing a type-I band alignment. The carrier confinement effect was observed in the photoluminescence spectra of the heterojunction sample. This study is valuable for the optimization of energy level alignment in perovskite/metallic oxide heterojunctions for the design of photoelectric devices.