Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 10, Issue -, Pages 593-599Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2022.3171217
Keywords
Switches; Electrodes; Tin; Films; Dielectrics; Tunneling; Memristors; Ferroelectric tunnel junction; FTJ; HZO; synaptic memristor; charge trapping; interfacial charge; polarization switching; neuromoprhic computing; artificial intelligence
Categories
Funding
- European Union through the BeFerroSynaptic Project [GA:871737]
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We present a combined experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. The injection and trapping of charge into the ferroelectric-dielectric stack are found to have a significant impact on the polarization switching. Our findings are important for understanding the physical processes and designing devices for memory and memristor applications.
We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectric-dielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.
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