Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 10, Issue -, Pages 620-626Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2022.3188893
Keywords
Substrates; Conductivity; Silicon; Radio frequency; Coplanar waveguides; Loss measurement; Permittivity measurement; Silicon-on-Insulator (SOI) technology; effective resistivity; trap-rich (TR) substrate; Parasitic Surface Conduction (PSC); RF characterization; RF substrate; harmonic distortion (HD); gold-doped silicon substrate (Au-Si); high temperature
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Funding
- ECSEL JU BEYOND5 Project
- Fonds de la Recherche Scientifique-FNRS FRIA Grant
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This paper compares the differences in RF performances among various advanced substrates such as TR, PSi, Au-Si, and DP, and investigates the influence of temperature and DC bias voltage. The purpose is to provide an overview and a more in-depth analysis of the characteristics of DP substrate to aid design choices for RF-IC applications.
This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were performed, including the study of the influence of temperature and DC bias voltage. The purpose of this paper is to provide an overview, and a more in-depth analysis of DP substrate, of the characteristics of these multiple substrates to facilitate design choices for RF-IC applications.
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