SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K

Here, we show that silicon carbide (SiC) complementary logic gates composed of p- and n-channel junction field-effect transistors (JFETs) fabricated by ion implantation operate at 623 K with a supply voltage as low as 1.4 V. The logic threshold voltage shift of the complementary JFET (CJFET) inverter is only 0.2 V from 300 to 623 K. Furthermore, temperature dependencies of the static and dynamic characteristics of the CJFET inverter are well explained by a simple analytical model of SiC JFETs.

Automated summary

In this study, silicon carbide complementary logic gates composed of p- and n-channel JFETs fabricated by ion implantation are shown to operate at high temperature with a low supply voltage. The logic threshold voltage of the complementary JFET inverter has a minimal shift with temperature, and the temperature dependencies of the static and dynamic characteristics can be explained by a simple analytical model of SiC JFETs.