Journal
IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 7, Pages 997-1000Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3179129
Keywords
Logic gates; Silicon carbide; JFETs; Inverters; Leakage currents; Temperature distribution; Analytical models; Silicon carbide; JFET; integrated circuits
Categories
Funding
- Japanese Science and Technology Agency
- Murata Science Foundation
- Inamori Foundation
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In this study, silicon carbide complementary logic gates composed of p- and n-channel JFETs fabricated by ion implantation are shown to operate at high temperature with a low supply voltage. The logic threshold voltage of the complementary JFET inverter has a minimal shift with temperature, and the temperature dependencies of the static and dynamic characteristics can be explained by a simple analytical model of SiC JFETs.
Here, we show that silicon carbide (SiC) complementary logic gates composed of p- and n-channel junction field-effect transistors (JFETs) fabricated by ion implantation operate at 623 K with a supply voltage as low as 1.4 V. The logic threshold voltage shift of the complementary JFET (CJFET) inverter is only 0.2 V from 300 to 623 K. Furthermore, temperature dependencies of the static and dynamic characteristics of the CJFET inverter are well explained by a simple analytical model of SiC JFETs.
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