Journal
IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 7, Pages 1001-1004Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3176238
Keywords
Curing; Stress; MOSFET; Logic gates; Junctions; Tunneling; Hybrid power systems; Charge pumping (CP); Joule heat (JH); low-frequency noise (LFN); parasitic bipolar junction transistor (PBJT); self-curing
Categories
Funding
- National Research Foundation of Korea [NRF-2021R1A2C3009069]
- BK21 FOUR Program of the Education and Research Program for Future ICT Pioneers, Seoul National University
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The article proposes a hybrid self-curing method based on the parasitic bipolar junction transistor (PBJT) inherent to the metal-oxide-semiconductor field-effect transistor (MOSFET), which can recover the damaged gate oxide along the entire channel.
We propose a hybrid self-curing method based on the parasitic bipolar junction transistor (PBJT) inherent to metal-oxide-semiconductor field-effect transistor (MOSFET). The PBJT utilizes the positive feedback of impact ionization to flow a large current close to the channel, generating Joule heat. Unlike conventional self-curing methods, the PBJT-based self-curing recovers the damaged gate oxide along the lateral dimension of the entire channel. The effects of the hybrid curing are quantitatively verified by low-frequency noise spectroscopy and charge pumping method.
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