Journal
INDIAN JOURNAL OF PHYSICS
Volume -, Issue -, Pages -Publisher
INDIAN ASSOC CULTIVATION SCIENCE
DOI: 10.1007/s12648-022-02439-4
Keywords
Si(100) surfaces; Pb thin films; Low-energy electron diffraction; Low-energy electron microscopy
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Funding
- Department of Atomic Energy (DAE), Government of India [XII-R DSIN-5.09-0102]
- CSIR, India
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The initial stages of room temperature growth of Pb overlayers on commercial Si(100) p(2 x 1) surface have been investigated using low-energy electron diffraction and low-energy electron microscopy (LEEM) techniques. A well-ordered reconstructed Si(100) p(10 x 2) surface phase has been observed for 0.5 monolayers of Pb deposition and is found to vanish for higher Pb coverages. We do not observe any island formation in our LEEM studies during the early stages of growth, unlike earlier studies on low-miscut substrates. Our dark-field LEEM experiments suggest the observed high step density with low terrace widths is responsible for this behaviour.
The initial stages of room temperature growth of Pb overlayers on commercial Si(100) p(2 x 1) surface have been investigated using low-energy electron diffraction and low-energy electron microscopy (LEEM) techniques. A well-ordered reconstructed Si(100) p(10 x 2) surface phase has been observed for 0.5 monolayers of Pb deposition and is found to vanish for higher Pb coverages. We do not observe any island formation in our LEEM studies during the early stages of growth, unlike earlier studies on low-miscut substrates. Our dark-field LEEM experiments suggest the observed high step density with low terrace widths is responsible for this behaviour.
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