Journal
INORGANIC CHEMISTRY FRONTIERS
Volume 9, Issue 19, Pages 4999-5007Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d2qi01259f
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Funding
- National Natural Science Foundation of China [21801058, 22102044]
- Fundamental Research Funds for the Central Universities [JZ2021HGTB0118, PA2021KCPY0057]
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This study investigates the enhancement of semiconductor activity by anchoring CdS quantum dots on an N-doped carbon support with trace ruthenium dispersed as a cocatalyst. The experimental results demonstrate that the Ru/NC/CdS-5 catalyst with low ruthenium loading exhibits the highest photocatalytic activity and significantly improves hydrogen production rate.
Semiconductors are usually employed to construct photocatalysts for hydrogen production, but bare semiconductors often suffer from a high recombination rate of charge carriers, resulting in low activity for proton reduction. Herein, CdS quantum dots (QDs) were anchored onto a tremella-like N-doped carbon (NC) support with trace ruthenium dispersed, to store and consume photo-excited electrons. The Ru/NC cocatalyst significantly enhances the interfacial transfer of electrons and facilitates proton reduction, leading to a decrease in the photoinduced charge recombination. The optimal Ru/NC/CdS-5 catalyst has a low Ru loading of 0.59 wt%, and it exhibits the highest photocatalytic activity with an H-2 evolution rate of up to 73.6 mmol g(-1) h(-1), which is 21 times higher than that of bare CdS QDs (3.38 mmol g(-1) h(-1)). The apparent quantum yield (AQY) of Ru/NC/CdS-5 under the same experimental conditions was found to be 3.6% under irradiation at 420 nm. The catalytic recycling test of Ru/NC/CdS-5 demonstrates its excellent stability. This work provides insight into the enhancement of the activity of semiconductors by dispersing a trace noble metal in a porous carbon support as a cocatalyst for proton reduction.
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