Related references
Note: Only part of the references are listed.Lightly strained germanium quantum wells with hole mobility exceeding one million
M. Lodari et al.
APPLIED PHYSICS LETTERS (2022)
The germanium quantum information route
Giordano Scappucci et al.
NATURE REVIEWS MATERIALS (2021)
A four-qubit germanium quantum processor
Nico W. Hendrickx et al.
NATURE (2021)
A singlet-triplet hole spin qubit in planar Ge
Daniel Jirovec et al.
NATURE MATERIALS (2021)
Theory of hole-spin qubits in strained germanium quantum dots
L. A. Terrazos et al.
PHYSICAL REVIEW B (2021)
Low percolation density and charge noise with holes in germanium
Mario Lodari et al.
MATERIALS FOR QUANTUM TECHNOLOGY (2021)
A single-hole spin qubit
N. W. Hendrickx et al.
NATURE COMMUNICATIONS (2020)
Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology
Amir Sammak et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
Light effective hole mass in undoped Ge/SiGe quantum wells
M. Lodari et al.
PHYSICAL REVIEW B (2019)
Electrical detection of spin accumulation and relaxation in p-type germanium
M. Kawano et al.
PHYSICAL REVIEW MATERIALS (2017)
Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
Yi-Hsin Su et al.
PHYSICAL REVIEW MATERIALS (2017)
Effective g factor of low-density two-dimensional holes in a Ge quantum well
T. M. Lu et al.
APPLIED PHYSICS LETTERS (2017)
Production of germanium stable isotopes single crystals
Mihail Fedorovich Churbanov et al.
CRYSTAL RESEARCH AND TECHNOLOGY (2017)
Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method
Jae-Hoon Han et al.
JOURNAL OF APPLIED PHYSICS (2016)
Spin transport in p-type germanium
F. Rortais et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2016)
A reconfigurable gate architecture for Si/SiGe quantum dots
D. M. Zajac et al.
APPLIED PHYSICS LETTERS (2015)
Production of stable silicon and germanium isotopes via their enriched volatile compounds
Petr G. Sennikov et al.
JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY (2015)
Scattering mechanisms in shallow undoped Si/SiGe quantum wells
D. Laroche et al.
AIP ADVANCES (2015)
Preparation of a clean Ge(001) surface using oxygen plasma cleaning
Patrick Ponath et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2013)
Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application
Jianshi Tang et al.
ACS NANO (2012)
Germanium surface passivation and atomic layer deposition of high-k dielectrics-a tutorial review on Ge-based MOS capacitors
Qi Xie et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
R. Zhang et al.
APPLIED PHYSICS LETTERS (2011)
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
T. M. Lu et al.
APPLIED PHYSICS LETTERS (2011)
Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices
W. M. Klesse et al.
NANOTECHNOLOGY (2011)
Academic and industry research progress in germanium nanodevices
Ravi Pillarisetty
NATURE (2011)
Electrical spin injection and transport in germanium
Yi Zhou et al.
PHYSICAL REVIEW B (2011)
Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
Hiroshi Matsubara et al.
APPLIED PHYSICS LETTERS (2008)
Electric dipole spin resonance for heavy holes in quantum dots
Denis V. Bulaev et al.
PHYSICAL REVIEW LETTERS (2007)
Hydrogen passivation of germanium (100) surface using wet chemical preparation
S Rivillon et al.
APPLIED PHYSICS LETTERS (2005)
Scattering mechanisms in high-mobility strained Ge channels
B Rössner et al.
APPLIED PHYSICS LETTERS (2004)
Practical design and simulation of silicon-based quantum-dot qubits
M Friesen et al.
PHYSICAL REVIEW B (2003)
Share Paper
