Journal
Advanced Electronic Materials
Volume 2, Issue 11, Pages -Publisher
WILEY-BLACKWELL
DOI: 10.1002/aelm.201600298
Keywords
-
Funding
- Hundred Talents Program of Chinese Academy of Sciences (CAS)
- National Natural Science Foundation of China [61571415, 51502283]
- CAS/SAFEA International Partnership Program for Creative Research Teams
Ask authors/readers for more resources
2D van der Waals heterostructures with different types of band alignment have recently attracted great attention due to their unique optical and electrical properties. Most 2D heterostructures are formed by transfer-stacking two monolayers together, but the interfacial quality and controllable orientation of such artificial structures are inferior to those epitaxial grown heterostructures. Herein, for the first time, a direct vapor phase growth of high-quality vertically stacked heterostructure of SnS2/MoS2 monolayers is reported. An extremely Type II band alignment exists in this 2D heterostructure, with band offset larger than any other reported. Consistent with the large band offset, distinctive optical properties including strong photoluminescence quenching in the heterostructure area are observed in the heterostructure. The SnS2/MoS2 heterostructures also exhibit well-aligned lattice orientation between the two layers, forming a periodic Moire superlattice pattern with high lattice mismatch. Electrical transport and photoresponsive studies demonstrate that the SnS2/MoS2 heterostructures exhibit an obvious photovoltaic effect and possess high on/off ratio (> 10(6)), high mobility (27.6 cm(2) V-1 s(-1)) and high photoresponsivity (1.36 A W-1). Efficient synthesis of such vertical heterostructure may open up new realms in 2D functional electronics and optoelectronics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available