3.8 Proceedings Paper

TCAD Simulation of InP DHBTs With an In53.2Ga46.8As Base and InGaAsP Collector Grading

Publisher

IEEE
DOI: 10.1109/IWMTS54901.2022.9832460

Keywords

InP DHBT; InGaAsP collector; TCAD simulation

Categories

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Funding

  1. DFG [SFB/TRR 196]
  2. EU
  3. State of North-Rhine Westphalia within the EFRE 2014-2020 framework Investment in Growth and Employment under the project Terahertz-Integrationszentrum (THzIZ) [EFRE-0400215]
  4. BMBF ForLab SmartBeam within the German federal government program Research and Innovation 2016-20 [Fkz. 16ES0936]

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This study focuses on the causes and improvements of the non-linear behavior of InP DHBTs through physical simulations. The simulated devices have triple mesa structures with type-I band alignment and utilize a carbon-doped In53.2Ga46.8As base, 0.5 μm emitter width, and InGaAsP material in the collector region for enhanced electron transport. The simulations showed a 5 dB difference in OIP3 values between two devices, and a significant discrepancy in RF performance in terms of transit frequency and maximum frequency of oscillation. The improved design also demonstrated better electron transport across the collector region, highlighting the collector design's high sensitivity to device performance.
This work focuses on causes and improvements of non-linear behavior of InP DHBTs from a physical simulation point of view. The simulated devices are based on triple mesa structures with type-I band alignment employing a carbon doped In53.2Ga46.8As base, 0.5 mu m emitter width and InGaAsP material in the collector region to improve the electron transport. Simulated OIP3 values differed by about 5 dB between two devices. RF performance, in terms of transit frequency and maximum frequency of oscillation, differed by about 75 GHz and 87 GHz for the same device designs. The improved design also showed better electron transport across the collector region, underlining the high sensitivity of device performance effected by the collector design.

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