Combined inelastic neutron scattering and ab initio lattice dynamics study of FeSi

The phonon renormalization across the semiconductor-to-metal crossover in FeSi is investigated by inelastic neutron scattering combined with ab initio lattice dynamical calculations. A significant part of reciprocal space with a particular focus on the 110 - 001 scattering plane is mapped by the time-of-flight inelastic neutron scattering data taken below and above the crossover. Individual momentum values are investigated in more detail as a function of temperature. The data reveal that the anomalous phonon softening upon metallization is not exclusive to the high symmetry R and Gamma points. Several other phonon modes around the R point as well as the phonon modes at the M and X points of the Brillouin zone exhibit anomalous phonon softening with magnitudes comparable to that observed at the R point. The momentum dependence of the phonon softening is reproduced by the lattice dynamical calculation based on the density functional perturbation theory. We discuss our findings with respect to the nature of the semiconductor-to-metal crossover in FeSi, for which different microscopic origins have been proposed, i.e., lattice thermal disorder and electronic correlation effects.

Automated summary

The phonon renormalization across the semiconductor-to-metal crossover in FeSi is investigated using inelastic neutron scattering and ab initio lattice dynamical calculations. The study reveals that the anomalous phonon softening upon metallization is not exclusive to specific symmetry points, but also occurs at various other points in reciprocal space. The momentum dependence of the phonon softening is reproduced by lattice dynamical calculations based on density functional perturbation theory.