Journal
2D MATERIALS
Volume 4, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aa51a2
Keywords
molecular beam epitaxy; van der Waals epitaxy; SnSe2; Raman spectroscopy; transmission electron microscopy; field effect transistor
Categories
Funding
- National Research Foundation of Korea (NRF)
- Ministry of Science, ICT & Future Planning [2010-0020207, 2011-0030786, 2012M3A7B4049888, 2013R1A1A2008285, 2014R1A2A2A01005963, 2015R1A2A2A01006992, 2015R1A5A1009962, 2016R1A2B4007367]
- Samsung Electronics
- Yonsei University
- National Research Foundation of Korea [2013R1A1A2008285, 2014R1A2A2A01005963, 2016R1A2B4007367] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The interest in layered materials is largely based on the expectation that they will be beneficial for a variety of applications, from low-power-consuming, wearable electronics to energy harvesting. However, the properties of layered materials are highly dependent on thickness, and the difficulty of controlling thickness over a large area has been a bottleneck for commercial applications. Here, we report layer-by-layer growth of SnSe2, a layered semiconducting material, via van der Waals epitaxy. The films were fabricated on insulating mica substrates with substrate temperatures in the range of 210 degrees C-370 degrees C. The surface consists of a mixture of Nand (N +/- 1) layers, showing that the thickness of the film can be defined with monolayer accuracy (+/- 0.6 nm). High-resolution transmission electron microscopy reveals a polycrystalline film with a grain size of similar to 100 nm and clear Moire patterns from overlapped grains with similar thickness. We also report field effect mobility values of 3.7 cm(2) V-1 s(-1) and 6.7 cm(2) V-1 s(-1) for 11 and 22 nm thick SnSe2, respectively. SnSe2 films with customizable thickness can provide valuable platforms for industry and academic researchers to fully exploit the potential of layered materials.
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