Journal
2D MATERIALS
Volume 3, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/3/3/035029
Keywords
topological insulator; hexagonal boron nitride; molecular beam epitaxy; bismuth selenide; magnetotransport
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Funding
- US-Korea Nano Bio Information Technology (NBIT) Program Phase III through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning (MSIP) [2013K1A3A1A32035597, AFOSR FA2386-13-1-4122]
- US-Korea Nano Bio Information Technology (NBIT) Program Phase III through the National Research Foundation of Korea (NRF) - Air Force Office of Scientific Research/Asian Office of Aerospace Research Development (AFOSR/AOARD) [2013K1A3A1A32035597, AFOSR FA2386-13-1-4122]
- Global Research Laboratory Program of the NRF - MSIP [2015K1A1A2033332]
- NRF - MSIP [NRF2015055406]
- Global PhD Fellowship grant of the NRF - Ministry of Education [2012H1A2A1003288]
- National Research Foundation of Korea [2012H1A2A1003288, 2013K1A3A1A32035597] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report the molecular beam epitaxial growth and characterization of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride (h-BN). A two-step growth was developed, enhancing both the surface coverage and crystallinity of the films on h-BN. High-resolution transmission electron microscopy study showed an atomically abrupt and epitaxial interface formation between the h-BN substrate and Bi2Se3. We performed gate tuned magnetotransport characterizations of the device fabricated on the thin film and confirmed a high mobility surface state at the Bi2Se3/h-BN interface. The Berry phase obtained from Shubnikov-de Haas oscillations suggested this interfacial electronic state is a topologically protected Dirac state.
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