Journal
2D MATERIALS
Volume 3, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/3/1/015006
Keywords
epitaxial graphene; environmental doping; Hall sensor; Kelvin probe force microscopy; gas sensor
Categories
Funding
- EC [CNECT-ICT-604391]
- EMRP under project GraphOhm [117359]
- NMS under IRD Graphene Project [118616]
- Office of Naval Research
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We directly correlate the local (20 nm scale) and global electronic properties of a device containing mono-, bi- and tri-layer epitaxial graphene (EG) domains on 6H-SiC (0001) by simultaneously performing local surface potential measurements using Kelvin probe force microscopy and global transport measurements. Using well-controlled environmental conditions we investigate the doping effects of N-2, O-2, water vapour and NO2 at concentrations representative of the ambient air. We show that presence of O-2, water vapour and NO2 leads to p-doping of all EG domains. However, the thicker layers of EG are significantly less affected. Furthermore, we demonstrate that the general consensus of O-2 and water vapour present in ambient air providing majority of the p-doping to graphene is a common misconception. We experimentally show that even the combined effect of O-2, water vapour, and NO2 at concentrations higher than typically present in the atmosphere does not fully replicate p-doping from ambient air. Thus, for EG gas sensors it is essential to consider naturally occurring environmental effects and properly separate them from those coming from targeted species.
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