Weak localization in few-layer black phosphorus

We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect measurement. We present magnetoresistance data showing the weak localization effect in bare p-type few-layer black phosphorus and reveal its strong dependence on temperature and carrier concentration. The measured weak localization agrees well with the Hikami Larkin Nagaoka model and the extracted phase coherence length of 104 nm at 350 mK, decreasing as similar to T-0.513+-0.053 with increased temperature. Weak localization measurement allows us to qualitatively probe the temperature-dependent phase coherence time To which is in agreement with the theory of carrier interaction in the diffusive regime. We also observe the universal conductance fluctuation phenomenon in few-layer black phosphorus within moderate magnetic field and low temperature regime.