Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode

High-speed and high-efficiency photodiodes are especially beneficial for exponential data communication traffic growth. However, improving high responsivity while maintaining low dark current and high bandwidth remains a challenge for vertical detector design. This study proposes a plasmonic InP/InGaAs uni-traveling-carrier photodiode with optical antenna arrays, which exhibits a low dark current of 2.52 nA at a -3 V bias voltage, a high bandwidth of over 40 GHz, and a high responsivity of 0.12 A/W. The absorption efficiency of the photodiode shows 2-fold improvement using plasmonic resonance generated by nanodisks at 1550 nm. This work designs a low dark current and high-bandwidth photodiode with improved responsivity, which provides a potential method for high-speed vertical photodiode design.

Automated summary

This study introduces a plasmonic InP/InGaAs uni-traveling-carrier photodiode with optical antenna arrays, featuring low dark current, high bandwidth, and high responsivity. By utilizing plasmonic resonance generated by nanodisks, the absorption efficiency of the photodiode is significantly improved. This work presents a potential method for high-speed vertical photodiode design with low dark current and high bandwidth.