Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 4, Issue 10, Pages 5087-5087Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c00912
Keywords
GaN; Mg-doped GaN; photoelectron hologram; reconstructed 3D; active and inactive
Funding
- JSPS [20H05882, 20H05884]
- JSPS KAKENHI [20H01841]
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In this study, we used PES and PEH techniques to investigate the atomic structures and chemical states in the active and inactive dopant states of Mg-doped GaN. The results revealed the presence of two chemical states, with the active state being attributed to Mg atoms replacing Ga atoms in the GaN structure, and the inactive state potentially being a disordered structure or defects.
We employed photoelectron spectroscopy (PES) and photoelectron holography (PEH) to clarify the atomic structures and chemical states in the active and inactive dopant states of Mg-doped GaN. Due to the lack of available direct evidence, this has been a controversial issue. From PES, we found that two chemical states existed in the Mg-doped GaN: One is an active dopant state, and the other is an inactive state. We employed PEH to investigate the two observed chemical states, indicating that the active state could be attributed to a Mg atom substituting a Ga atom in the Mg-doped GaN structure (Mg-Ga). The inactive state, on the other hand, was considered to be a disordered structure, an amorphous structure, defects, and/or MgGa bonding with a H atom in that structure.
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