Journal
PHYSICAL REVIEW APPLIED
Volume 5, Issue 5, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.5.054016
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Funding
- U.S. government
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
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A set of seven InAs/In(As, Sb) type-II superlattices (T2SLs) are designed to have specific band-gap energies between 290 meV (4.3 mu m) and 135 meV (9.2 mu m) in order to study the effects of the T2SL band-gap energy on the minority-carrier lifetime. A temperature-dependent optical pump-probe technique is used to measure the carrier lifetimes, and the effect of a midgap defect level on the carrier-recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 +/- 12 meV relative to the valence-band edge of bulk GaSb for the entire set of T2SL structures, even though the T2SL valence-band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/In(As, Sb) T2SLs is singular and is nearly independent of the exact position of the T2SL band-gap or band-edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the band gap, a result that should significantly increase the minority-carrier lifetime.
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