Temperature-dependent band modification and energy dependence of the electron-phonon interaction in the topological surface state on Bi2Te3

We report the temperature-dependent band structure and energy dependence of the electron-phonon interaction of the topological surface state (TSS) on the three-dimensional topological insulator Bi2Te3 using angle-resolved photoemission spectroscopy. Despite the nonrigid-band-like band modification as the temperature increases, the degeneracy at the Dirac point (DP) was robust, indicating topological protection. The electron-phonon coupling parameter depends on the initial-state electron energy, varying from 0.13 (at the DP) to 0.02 (100 meV above the DP), in agreement with reported first-principles calculations. Our findings provide insight into the physical properties derived from TSSs at finite temperatures.

Automated summary

This study investigates the temperature-dependent band structure and energy dependence of the electron-phonon interaction of the topological surface state (TSS) on the three-dimensional topological insulator Bi2Te3 using angle-resolved photoemission spectroscopy. The findings reveal that the degeneracy at the Dirac point (DP) remains robust with increasing temperature, indicating topological protection. Additionally, the electron-phonon coupling parameter is shown to depend on the initial-state electron energy.