Hybrid molecular beam epitaxy of germanium-based oxides

Germanium-based oxides such as rutile GeO2 are garnering attention owing to their wide band gaps and the prospects of ambipolar doping for application in high-power devices. Here, we present the use of germanium tetraisopropoxide (GTIP), a metal-organic chemical precursor, as a source of germanium for the demonstration of hybrid molecular beam epitaxy for germanium-containing compounds. We use Sn1-xGexO2 and SrSn1-xGexO3 as model systems to demonstrate our synthesis method. A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn1-xGexO2 on TiO2(001) substrates up to x = 0.54 and coherent perovskite SrSn1-xGexO3 on GdScO3(110) substrates up to x = 0.16. Characterization and first-principles calculations corroborate that germanium occupies the tin site, as opposed to the strontium site. These findings confirm the viability of the GTIP precursor for the growth of germanium-containing oxides by hybrid molecular beam epitaxy, thus providing a promising route to high-quality perovskite germanate films.

Automated summary

Germanium-based oxides have attracted attention due to their wide band gaps and the potential for ambipolar doping in high-power devices. This study demonstrates the use of germanium tetraisopropoxide (GTIP), a metal-organic chemical precursor, for the growth of germanium-containing compounds using hybrid molecular beam epitaxy. Epitaxial rutile Sn1-xGexO2 and perovskite SrSn1-xGexO3 films were successfully grown using this method, confirming the viability of GTIP precursor for high-quality perovskite germanate films.