Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 21, Issue -, Pages 539-546Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2022.3208084
Keywords
Modulation; Plasmons; Graphene; Frequency modulation; Logic gates; MODFETs; HEMTs; Graphene transistor; Dyakonov-Shur instability; THz modulation; plasmonics
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Funding
- Air Force Office of Scientific Research [FA9550-16-1-0188]
- US National Science Foundation [CNS-2011411]
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This paper presents an on-chip THz nano-generator using a graphene-based high-electron-mobility transistor, which demonstrates excellent performance through simulation and numerical analysis.
Terahertz communication is envisioned as a key technology not only for the next generation of macro-scale networks (e.g., 6G), but also for transformative networking applications at the nanoscale (e.g., wireless nanosensor networks and wireless networks on chip). In this paper, an on-chip THz nano-generator with amplitude and frequency modulation capabilities is presented. The proposed device uses and leverages the tunability of the Dyakonov-Shur instability for the growth and modulation of plasmonic oscillations in the two-dimensional electron gas channel of a graphene-based high-electron-mobility transistor. An in-house developed finite-element-methods platform, which self-consistently solves the hydrodynamic model and Maxwell's equations, is utilized to provide extensive numerical results demonstrating the device's functionality along with ultra-wide bandwidth and high modulation index capabilities.
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