4.6 Article

Room-temperature magnetoresistance in Ni78Fe22/C8-BTBT/Ni78Fe22 nanojunctions fabricated from magnetic thin-film edges using a novel technique

Journal

NANOSCALE ADVANCES
Volume 4, Issue 22, Pages 4739-4747

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d2na00442a

Keywords

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Funding

  1. Japan Society for the Promotion of Science (JSPS) [21H01397, 19K22093]
  2. Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials
  3. Cooperative Research Program of Network Joint Research Center for Materials and Devices - Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
  4. Center for Spintronics Research Network (CSRN) at Keio and Tohoku University

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Molecular spintronic devices are becoming popular due to the long spin relaxation times of organic semiconductors. In this study, high-mobility molecules were used to fabricate magnetic nanojunctions, and a clear magnetoresistance effect was observed at room temperature.
Molecular spintronic devices are gaining popularity because the organic semiconductors with long spin relaxation times are expected to have long spin diffusion lengths. A typical molecular spintronic device consists of organic molecules sandwiched between two magnetic layers, which exhibits magnetoresistance (MR) effect. Nanosized devices are also expected to have a high spin polarization, leading to a large MR effect owing to effective orbital hybridization. However, most studies on nanosized molecular spintronic devices have investigated the MR effect at low temperatures because of the difficulty in observing the MR effect at room temperature. Here we focus on high-mobility molecules expected to show long spin diffusion lengths, which lead to the observation of the MR effect in nanoscale junctions at room temperature. In this study, we fabricate magnetic nanojunctions consisting of high-mobility molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), sandwiched between two Ni78Fe22 thin films with crossed edges. Transmission electron microscopy (TEM) images reveal that C8-BTBT molecular layers with smooth and clear interfaces can be deposited on the Ni78Fe22 thin-film edges. Consequently, we observe a clear positive MR effect, that is, R-P < R-AP, where R-P and R-AP are the resistances in the parallel (P) and antiparallel (AP) configurations, respectively, of two magnetic electrodes in the Ni78Fe22/C8-BTBT/Ni78Fe22 nanojunctions at room temperature. The obtained results indicate that the spin signal through the C8-BTBT molecules can be successfully observed. The study presented herein provides a novel nanofabrication technique and opens up new opportunities for research in high-mobility molecular nano-spintronics.

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