Performance of a kilo-pixel RNDR-DEPFET detector

The combined storage and amplifier structure of a Depleted P-channel Field-Effect Transistor provides the capability to collect, store and read out charge carriers. In combination with an efficient charge transfer between two storage regions, this enables a statistically independent repetitive non-destructive readout of active pixels integrated on a fully depleted, high purity silicon bulk. Averaging the repetitions allows for deep sub-electron noise levels. After the working principle of those sensors was demonstrated on single pixel devices, a 64x64 pixel detector has been operated for the first time. The sensor achieved a single electron sensitivity by recording the spectrum of a light emitting diode. A mean sub-electron noise below 0.2 e(-) ENC at a readout time below 230 ms/frame are demonstrated.

Automated summary

The combined structure of a Depleted P-channel Field-Effect Transistor allows for the collection, storage, and readout of charge carriers. By efficiently transferring charges between two storage regions, it enables a statistically independent repetitive non-destructive readout of active pixels. Averaging the repetitions results in deep sub-electron noise levels.