Journal
TWENTY-NINETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES: TFT TECHNOLOGIES AND FPD MATERIALS (AM-FPD 22)
Volume -, Issue -, Pages 200-201Publisher
IEEE
Keywords
-
Funding
- JSPS Kakenhi [22K14291]
Ask authors/readers for more resources
This research aims to improve the electrical performance of all-solution processed amorphous Indium Zinc Oxide (a-IZO) thin-film transistor (TFT) by varying the duration of photo-assisted treatment. The experimental results showed that TFTs subjected to 90 minutes of UV-combination treatment achieved the optimum value with the highest mobility.
All-solution process for thin-film transistor (TFT) is promising due to its simple fabrication and low temperature enabling the use of flexible substrates. We successfully fabricated all-solution processed amorphous Indium Zinc Oxide (a-IZO) TFT. This research aims to improve the electrical performance of a-IZO TEl by varying the duration of photo-assisted treatment (Ultraviolet (UV) irradiation combined with low-heating treatment). Electrical performance of a-IZO TEl was enhanced by varying the UV-irradiation time combined with low heating treatment (115 degrees C). As a result, TFTs subjected to UV-combination treatment at 90 min reached the optimum value with highest mobility-, corresponding to the highest oxygen vacancy with optiiniun metal-oxide bonds.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
