Influence of Sn Concentration on the Performance of Solution Combustion Synthesis-Assisted SixSnyO Thin-film Transistors

Solution combustion synthesis was used to fabricate solution-processed SixSnyO thin-film transistors at 300 degrees C. In comparison to the conventional sol-gel film, the SCS SixSnyO film contained lower carbon impurities, with high percentage of metal oxide bonds. The optimum Sn concentration for fabricating SixSnyO devices was also determined. The fabricated Si,Sny0 TFT with optimtun Sn concentration (0.10M) has linear mobility of 3.14 cm(2)/V s, an SS of 2.49 V/dec, I-ON/I-OFF of 10(4), and Vth of -11.59 V

Automated summary

Solution combustion synthesis was utilized to produce solution-processed SixSnyO thin-film transistors, which exhibited lower carbon impurities and higher metal oxide bond percentages compared to conventional sol-gel films. The optimal Sn concentration for fabricating SixSnyO devices was also determined.