4.6 Article

Synergistic Influence of the Deposition Method, Postdeposition Annealing, and Textured Substrates on the Properties of ITO Thin Films

Journal

ACS APPLIED ELECTRONIC MATERIALS
Volume 4, Issue 11, Pages 5506-5518

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c01126

Keywords

DC sputtering; electrical properties; ITO thin films; optical properties; RF sputtering; surface microtexturing

Funding

  1. SRM Excellence Research Initiative
  2. [2021-22]

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In this study, ITO thin films were deposited on glass substrates using DC and RF magnetron sputtering, followed by annealing. The effects of deposition technique, annealing, and textured substrates on the structural, optical, and electrical properties of the films were investigated. The results showed that RF-sputtered samples exhibited better structural and electrical properties compared to DC-sputtered samples, and annealing improved the crystallinity and transmittance of the films.
Indium tin oxide (ITO) thin films were sputtered on the plain and textured glass substrates using direct current (DC) and radio frequency (RF) magnetron sputtering and then subjected to annealing. The optical lithography process was adopted to give texture to the glass substrates with an array of microcuboids with similar to 40 mu m x similar to 40 mu m sides out of crosslinked negative photoresists SU-8 2000.5 and SU-8 2005 to obtain cuboid heights of similar to 0.5 and similar to 5 mu m, respectively. The synergistic influences of the deposition technique, postdeposition annealing, and the use of textured substrates on the structural, optical, and electrical properties of the films were investigated using optical microscopy, scanning electron microscopy (SEM), optical profilometry, and X-ray diffraction (XRD) analyses. In addition to transmittance analysis using UV-vis spectroscopy, angle-dependent specular reflectance measurements and COMSOL simulations have been done to correlate the observed improved transmittance in ITO films grown on textured substrates. The ITO thin films deposited by DC and RF sputtering were polycrystalline with (222) and (400) orientations, respectively. The enhanced capability of accommodation of oxygen vacancies in (400)-oriented films led to better structural and electrical properties in RF-sputtered samples. Annealing has resulted in improved crystallinity and reduction in lattice distortion that account for a higher transmittance of similar to 87.02% in the 350 nm to 1200 nm wavelength region and lowered electrical resistivity in both the annealed DC-and RF-sputtered samples. It is also observed that the transmittance improved due to the influence of underlying SU-8 periodical textures, with no undesired drastic changes to the electrical properties.

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