Quantum pumping through the surface states of a topological insulator

We investigate quantum charge pumping through the surface states of a topological insulator (TI), i.e., Bi2Te3. We consider a device with two oscillating potentials for the generation of a dc current in the adiabatic pumping regime. Applying the exchange magnetic field, we show that the device can work as a memory read-out. Also, we show that by applying a static gate voltage the pumping device can work as a field-effect transistor. In addition, the pumped current obtained in our proposed device is significantly (more than three orders of magnitude) greater than the pumped current obtained previously for TI-based devices. These properties show that Bi2Te3 can be considered a good candidate for the fabrication of nanoelectronic devices based on TI as well as low-power and low-energy consumption devices in quantum computing.

Automated summary

The study investigates the quantum charge pumping through the surface states of Bi2Te3, showcasing its potential applications in nanoelectronic devices, including memory read-out and field-effect transistors.