Improvement of the optical absorption of a photovoltaic device by embedding an ultra-thin film of CdSexTe1-x in its absorber layer

It has been reported with the use of thin films placed in the p-type and n-type layer interface in photovoltaic devices, the short-circuit current density (J(sc)) increases, this spite of decreasing the open-circuit voltage (V-oc). In this work, in order to increase the light absorbance, and therefore, contribute to an increment in J(sc) and V-oc, a novel architecture has been proposed by the deposition of a CdSe0.6Te0.4 ultra-thin film placed inside de p-type layer. The proposed structure exhibited an increment in power conversion efficiency compared to another fabricated with the conventional structure.

Automated summary

By using thin films placed in the p-type and n-type layer interface in photovoltaic devices, it has been reported that the short-circuit current density (J(sc)) increases, despite a decrease in the open-circuit voltage (V-oc). In this study, a novel architecture with the deposition of a CdSe0.6Te0.4 ultra-thin film inside the p-type layer is proposed to increase light absorbance and improve power conversion efficiency compared to conventional structures.