Indium-free GZO thin films prepared using plasma-enhanced atomic layer deposition: toward thin film transistor application

Indium-gallium-zinc oxide (IGZO) is regarded as one of the most promising materials to meet the requirements of thin film transistors (TFTs). However, the high cost and environmental danger of indium limit its commercial application. Moreover, the quaternary compound cannot be easily made using thin-film deposition. In this work, GZO thin films without indium have been prepared as a channel layer in TFTs using plasma-enhanced atomic layer deposition (PEALD). The cycle ratio of Ga2O3 to ZnO was varied to investigate its impact on the film properties. The GZO films were examined using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), Hall-effect probe measurement and UV-visible spectroscopy. The results of the GZO thin film with 7.5% Ga2O3 cycle ratio showed a low carrier concentration of 1.37 x 10(17) cm(-3) and Hall mobility of 10.67 cm(2) V-1 s(-1). The structural characteristics and electrical characteristics of the GZO channel layer well-align with this conclusion. The I-on/I-off ratio and mobility of TFT based on 7.5% cycle ratio GZO are 1.33 x 10(6) and 2.6 cm(2) V-1 s(-1), respectively. In this study, the indium-free GZO thin film deposited using PEALD demonstrates great potential for TFT applications.

Automated summary

In this study, indium-free GZO thin films were successfully deposited using plasma-enhanced atomic layer deposition (PEALD) and used as the channel layer in thin film transistors (TFTs). Modifying the cycle ratio of Ga2O3 to ZnO can affect the film properties, with the 7.5% cycle ratio GZO film showing low carrier concentration and high Hall mobility.