Journal
ESSCIRC 2022- IEEE 48TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC)
Volume -, Issue -, Pages 189-192Publisher
IEEE
DOI: 10.1109/ESSCIRC55480.2022.9911497
Keywords
CMOS SPAD; imager; TDC; quantum optics and binary imaging
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A multi-functional image sensor based on SPAD technology and CMOS image sensor technology, which operates in multiple working modes, has wide application prospects in various fields.
A 60k-pixel SPAD-based, multi-functional image sensor is designed and fabricated in a 110-nm CMOS image sensor technology. The 30.0-mu m pixel with 12.9% fill-factor can operate in multiple working modes to count photons with a 7-bit counter, to timestamp them with an in-pixel time-to-digital converter down to 184ps resolution and 8-bit depth, or to generate a fast sequence of 7 gated binary images. Thanks to its reconfigurability, up to 3kHz frame rate and less than 80 mW power consumption, the sensor can be applied to a large spectrum of applications: here its use in a Fluorescence Lifetime Imaging Microscopy setup, in a quantum physics experiment, and in the acquisition of a high dynamic range scene are demonstrated.
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