Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 4, Issue 12, Pages 6029-6037Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c01182
Keywords
polypeptoids; doping; grafting to; polymer brush; phosphorus delta layer
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Monodisperse polypeptoids were prepared through submonomer synthesis, with defect insertion to improve solubility. Polypeptoid brushes were prepared at high temperature, allowing precise control of brush thickness. Ashing the polypeptoid brushes removed the chains while preserving the dopant atoms.
Monodisperse polypeptoids with 5, 10, 14, and 19 monomer units and a phosphorus containing moiety at one end were prepared through the submonomer solid-phase synthetic approach. The insertion of defects at specific positions along the polymer chain enables the suppression of their crystallinity thus leading to amorphous samples with improved solubility. Polypeptoid brushes were prepared by performing the graf ting to process at high temperature for a short time thus decoupling the grafting process from thermal degradation. Precise control of the brush thickness is achieved by selection of the polypeptoid chain length. Ashing the polypeptoid brushes by O2 plasma leads to complete removal of the chains while preserving the dopant atoms covalently bound to the silicon surface. In this way, phosphorus delta-layers with precisely predetermined amounts of dopant atoms are obtained. These results highlight the possibility to integrate precision polymers prepared by perfectly reproducible procedures in the sophisticated processes of the microelectronics industry.
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