Journal
2022 IEEE 22ND TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF)
Volume -, Issue -, Pages 58-61Publisher
IEEE
DOI: 10.1109/SiRF53094.2022.9720043
Keywords
Silicon Germanium; BiCMOS integrated circuits; Multiplying Circuits
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We introduce an ultra wideband push-push based frequency doubler with differential outputs and a 3 dB-bandwidth from 4.8 to 80 GHz. By utilizing an on-chip active balun, the differential drive signal is achieved, enabling good fundamental rejection. Experimental results confirm the functionality of the circuit up to 100 GHz.
We present an ultra wideband push-push based frequency doubler with differential outputs and a 3 dB-bandwidth from 4.8 to 80 GHz. The maximum conversion gain is 1.7 dB at 25 GHz and -13 dBm input signal. An on-chip active balun provides the differential drive signal enabling a good fundamental rejection over a wide bandwidth. Measurements up to 100 GHz verify the circuits functionality. The output bandwidth of 75 GHz combined with less than 3 dB output power variation exceeds the results of previous publications with differential outputs.
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