4.4 Article

Bonding of 5 μm Cu-Sn Micro Bumps Using Thermal Reflow and Solid-State Pre-Bonding

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCPMT.2022.3213540

Keywords

Copper-tin (Cu-Sn); intermetallic compound; reflow; three-dimensional (3-D) integration

Funding

  1. National Natural Science Foundation of China(NSFC) [61734004]
  2. Semiconductor Technology Innovation Center (Beijing) Corporation [QYJS-2021-0900-B]

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This article investigates the application of copper-tin (Cu-Sn) transient liquid-phase (TLP) bonding on microbumps. By improving the reflow and pre-bonding methods, a high bonding yield of microbumps with a diameter as small as 5μm has been successfully achieved.
Copper - tin (Cu-Sn) transient liquid-phase (TLP) bonding has attractive advantages and has been widely used in three-dimensional (3-D) integration to establish electrical connections between stacked chips. However, TLP bonding has technical difficulties in bonding Cu-Sn humps with small diameters and fine pitches due to the bonding pressure-induced lateral extrusion of the melted Sn layer. As bonding of micro bumps with diameters smaller than 5 mu m is highly desired in future applications, this article reports the TLP bonding of micro humps using improved reflow and pre-bonding. Due to the large surface-to-volume ratio of micro humps, the reflow conditions dramatically influence the reflow characteristics, and systematical investigations are performed such that an Sn layer with an optimal thickness has been obtained to avoid lateral extrusion. A new bonding scheme has been developed by combining a solid-state pre-bonding and a TLP final bonding. The new bonding method and the Sn thickness control reflow avoid liquid Sn extrusion under bonding pressure. Using these techniques, Cu-Sn bonding of bumps with a diameter clown to 5 mu m has been successfully achieved with a high bonding yield.

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