Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8

Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, niobium halide semiconductors Nb3X8 (X = Cl, Br, I) have been predicted to be two-dimensional magnets and these materials are also interesting for their breathing kagome geometry. However, experimental electronic structure studies of these promising materials are still lacking. Here, we report the spectroscopic evidence of flat and weakly dispersing bands in breathing-kagome semiconductor Nb3I8 around 500 meV binding energy, which is well supported by our first-principles calculations. These bands originate from the breathing kagome lattice of niobium atoms and have niobium d-orbital character. They are found to be sensitive to the polarization of the incident photon beam. Our study provides insight into the electronic structure and flat band topology in an exfoliable kagome semiconductor, thereby providing an important platform to understand the interaction of geometry and electron correlations in two-dimensional materials.

Automated summary

This study presents spectroscopic evidence of flat and weakly dispersing bands in the breathing-kagome semiconductor Nb3I8, highlighting the sensitivity of these bands to the polarization of the incident photon beam. The findings contribute to understanding the interaction of geometry and electron correlations in two-dimensional materials.