A Process-Based Temperature Compensated On-Chip CMOS VHF VCRO in 130-nm Si-Ge BiCMOS by Implementing an Empirical Control Equation

This paper presents a low-power CMOS temperature and process compensated 150.9 MHz Very-high-frequency (VHF) voltage-controlled-ring-oscillator (VCRO) for on-chip integration. The design employs a CMOS temperature-sensor and novel feedback control circuitry to generate the internal control-voltage for the VCRO which ensures oscillation in the vicinity of the desired frequency despite variations in temperature. The control circuitry is the implementation of an empirical equation expressing a temperature sensor-voltage into a specific control-voltage for three different process corners using three different switches. The control-voltage calibrates against temperature variation for the specific process-corner in order to maintain the same frequency of oscillation. Simulations shows that the proposed design maintains the oscillator's frequency within 0.39% from -10 ? to 90 ?. The fabricated chip implemented in 130-nm GF 8HP Si-Ge BiCMOS process, occupies an area of 0.0242-mm(2) and consumes 325 mu W while operating with a 1 V supply-voltage. The performance was verified through experimental immersion of DUT (device-under-test) in a temperature-controlled water-bath in the range 22.5 ?-70 ?.

Automated summary

This paper presents a low-power CMOS temperature and process compensated 150.9 MHz VHF voltage-controlled-ring-oscillator (VCRO) for on-chip integration. The design uses a temperature sensor and feedback control circuitry to generate the internal control voltage for the VCRO, ensuring oscillation at the desired frequency despite temperature variations. Simulation results demonstrate that the proposed design maintains the oscillator's frequency within 0.39% from -10 ? to 90 ?.